Dual-plane complementary metal oxide semiconductor

Details Dual-plane complementary metal oxide semiconductor Dual-plane complementary metal oxide semiconductor

2008-04-29

2008-04-29

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S192000

Reexamination Certificate

active

07365401

ABSTRACT:
Embodiments herein present a device, method, etc. for a dual-plane complementary metal oxide semiconductor. The device comprises a fin-type transistor on a bulk silicon substrate. The fin-type transistor comprises outer fin regions and a center semiconductor fin region, wherein the center fin region has a {110} crystalline oriented channel surface. The outer fin regions comprise a strain inducing material that stresses the center semiconductor fin region. The strain inducing material contacts the bulk silicon substrate, wherein the strain inducing material comprises germanium and/or carbon. Further, the fin-type transistor comprises a thick oxide member on a top face thereof. The fin-type transistor also comprises a first transistor on a first crystalline oriented surface, wherein the device further comprises a second transistor on a second crystalline oriented surface that differs from the first crystalline oriented surface.

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