Thermal coupling of matched SOI device bodies

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S369000, C257S401000, C257S506000

Reexamination Certificate

active

07397085

ABSTRACT:
Performance matching devices in SOI are improved by thermally isolating matched devices within a continuous body of active material. Matched devices are isolated by an insulating wall of silicon dioxide (which surrounds the devices) and the oxide layer beneath, and are arranged to minimize effects from external thermal sources.

REFERENCES:
patent: 5378919 (1995-01-01), Ochiai
patent: 5489792 (1996-02-01), Hu et al.
patent: 5724336 (1998-03-01), Morton
patent: 5895956 (1999-04-01), Oowaki et al.
patent: 6037808 (2000-03-01), Houston et al.
patent: 6072224 (2000-06-01), Tyson et al.
patent: 6087894 (2000-07-01), Barrett et al.
patent: 6104068 (2000-08-01), Forbes
patent: 6133608 (2000-10-01), Flaker et al.
patent: 6624459 (2003-09-01), Dachtera et al.
patent: 6244420 (1994-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thermal coupling of matched SOI device bodies does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thermal coupling of matched SOI device bodies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal coupling of matched SOI device bodies will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2746693

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.