Method of manufacturing III nitride crystal, III nitride...

Details Method of manufacturing III nitride crystal, III nitride... Method of manufacturing III nitride crystal, III nitride...

2011-06-21

2011-06-21

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21108, C257SE21109, C257SE21117, C257SE21119, C257SE33005

Reexamination Certificate

active

07964477

ABSTRACT:
Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the {0001} form is minimal. A method of manufacturing the III-nitride crystal is one of: conditioning a plurality of crystal plates (10) in which the deviation in crystallographic plane orientation in any given point on the major face (10m) of the crystal plates (10), with respect to an {hkil} plane chosen exclusive of the {0001} form, is not greater than 0.5°; arranging the plurality of crystal plates (10) in a manner such that the plane-orientation deviation, with respect to the {hkil} plane, in any given point on the major-face (10m) collective surface (10a) of the plurality of crystal plates (10) will be not greater than 0.5°, and such that at least a portion of the major face (10m) of the crystal plates (10) is exposed; and growing second III-nitride crystal (20) onto the exposed areas of the major faces (10m) of the plurality of crystal plates (10).

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