Resistive sense memory calibration for self-reference read...

Details Resistive sense memory calibration for self-reference read... Resistive sense memory calibration for self-reference read...

2011-03-01

2011-03-01

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000, C365S189070, C365S189090

Reexamination Certificate

active

07898838

ABSTRACT:
Resistive memory calibration for self-reference read methods are described. One method of self-reference reading a resistive memory unit includes setting a plurality of resistive memory units to a first resistive data state. The resistive memory units forms a memory array. Reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit. Then the method includes adjusting the first or the second read current, read voltages, or storage device capacitance for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.

REFERENCES:
patent: 6317356 (2001-11-01), Hoffmann
patent: 6804141 (2004-10-01), Rickes et al.
patent: 6870760 (2005-03-01), Tsang
patent: 7102946 (2006-09-01), Pelella
patent: 7123505 (2006-10-01), Jeong
patent: 7170308 (2007-01-01), Rahim et al.
patent: 7170782 (2007-01-01), Conley
patent: 7187577 (2007-03-01), Wang
patent: 7224601 (2007-05-01), Panchula
patent: 7272034 (2007-09-01), Chen
patent: 7272035 (2007-09-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7379327 (2008-05-01), Chen
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 2002/0126524 (2002-09-01), Sugibayashi et al.
patent: 2006/0013039 (2006-01-01), Braun
patent: 2006/0098498 (2006-05-01), Jeong
patent: 2006/0233018 (2006-10-01), Tanizaki
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0185410 (2009-07-01), Huai
U.S. Appl. No. 12/147,727, filed Jun. 27, 2008 Chen.
Hosomi et al., A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM, 2005 IEEE.

Affiliated with

Also associated with

Rating

Resistive sense memory calibration for self-reference read... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Resistive sense memory calibration for self-reference read..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resistive sense memory calibration for self-reference read... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2745375