Nonvolatile semiconductor memory element with silicon...

Details Nonvolatile semiconductor memory element with silicon... Nonvolatile semiconductor memory element with silicon...

2011-08-16

2011-08-16

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257SE29309

Reexamination Certificate

active

07999308

ABSTRACT:
To improve a charge retention characteristic of a nonvolatile memory transistor. A first insulating film, a charge trapping film, and a second insulating film are formed between a semiconductor substrate and a conductive film. The charge trapping film is formed of a silicon nitride film including an upper region having a low concentration of hydrogen and a lower region having a high concentration of hydrogen. Such a silicon nitride film is formed in such a manner that a silicon nitride film including 15 atomic % or more hydrogen is formed by a chemical vapor deposition method and an upper portion of the silicon nitride film is nitrided. The nitridation treatment is performed by nitriding the silicon nitride film by nitrogen radicals produced in plasma of a nitrogen gas.

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