Image pickup element performing image detection of high...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S292000, C257S293000, C257SE27133

Reexamination Certificate

active

07868365

ABSTRACT:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.

REFERENCES:
patent: 5786588 (1998-07-01), Takahashi
patent: 6188094 (2001-02-01), Kochi et al.
patent: 6784928 (2004-08-01), Sakurai et al.
patent: 7193258 (2007-03-01), Hara et al.
patent: 362128677 (1987-06-01), None
patent: 2000-232216 (2000-08-01), None
patent: 2001-024948 (2001-01-01), None
patent: 2002-050752 (2002-02-01), None
patent: 2005-268537 (2005-09-01), None
Hidekazu Takahashi et al. “A 3.9μm Pixel Pitch VGA Format 10b Digital Image Sensor With 1.5-Transistor/Pixel”, ISSCC 2004/Session 6/Imaging/6.1, 2004 IEEE International Solid State Circuits Conference, pp. 108-109; 78.
Mitsuyoshi Mori et al. “A ¼in 2M Pixel CMOS Image Sensor With 1.75Transistor/Pixel”, ISSCC 2004/Session 6/Imaging/6.2, 2004 IEEE International Solid State Circuits Conference, pp. 110-111; 80.
Notice of Grounds of Rejection issued in corresponding Japanese Application No. JP 2004-078827 dated Sep. 1, 2009, and an English Translation thereof.
Notice of Grounds of Rejection issued in corresponding Japanese Application No. JP 2009-048210 dated Sep. 1, 2009, and an English Translation thereof.

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