Semiconductor storage device and method of manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S314000, C257S315000, C257SE29129, C257SE29134, C257SE29136, C438S257000

Reexamination Certificate

active

08008705

ABSTRACT:
Disclosed is a semiconductor storage device having a trench around a bit-line diffusion region in an area of a p-well, which constitutes a memory cell area, that is not covered by a word line and a select gate that intersects the word line. An insulating film is buried in the trench.

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Japanese Office Action dated Jun. 7, 2011 (with a partial English translation).

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