Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-01-18

2011-01-18

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S324000, C257SE29300, C257SE29309, C257SE21180, C257SE21422, C257SE21423, C257SE21679

Reexamination Certificate

active

07872296

ABSTRACT:
A semiconductor memory device includes a semiconductor substrate having a projection, an upper end portion of the projection being curved, a first element isolation insulating film formed on the substrate surface at the root of the projection, having an upper surface lower than an upper surface of the projection, a second element isolation insulating film formed in the projection, a gate insulating film formed on the projection, and including a charge storage layer, and a gate electrode formed on the gate insulating film. A height of a first portion where the gate electrode is in contact with the gate insulating film above the upper surface of the first element isolation insulating film is smaller than that of a second portion where the gate electrode is in contact with the gate insulating film above an upper end of the second element isolation insulating film.

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U.S. Appl. No. 12/038,383, filed Feb. 27, 2008, Toshiharu Watanabe.

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