Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-11
2011-01-11
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S338000, C257S341000, C257S350000, C257S351000, C257S357000, C257S371000, C257S401000, C257SE27026, C257SE27027, C257SE27059, C257SE27060, C257SE27062, C257SE27064
Reexamination Certificate
active
07868391
ABSTRACT:
A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.
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Paone Phil Christopher Felice
Paulsen David P.
Sheets, II John E.
Williams Kelly L.
International Business Machines - Corporation
Soward Ida M
Williams Robert R.
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