Polycrystalline thin film bipolar transistors

Details Polycrystalline thin film bipolar transistors Polycrystalline thin film bipolar transistors

2011-08-23

2011-08-23

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S565000, C257S584000

Reexamination Certificate

active

08004013

ABSTRACT:
A semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide is described. The emitter region and collector region also may comprise polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium silicide.

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