Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-19
2011-07-19
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S317000, C257S320000, C257S321000
Reexamination Certificate
active
07982255
ABSTRACT:
A flash memory device wherein the floating gate of the flash memory is defined by a recessed access device. The use of a recessed access device results in a longer channel length with less loss of device density. The floating gate can also be elevated above the substrate a selected amount so as to achieve a desirable coupling between the substrate, the floating gate and the control gate comprising the flash cell.
REFERENCES:
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5488244 (1996-01-01), Quek et al.
patent: 5661055 (1997-08-01), Hsu et al.
patent: 5680345 (1997-10-01), Hsu et al.
patent: 5744847 (1998-04-01), Wen
patent: 6008079 (1999-12-01), Wu
patent: 6157058 (2000-12-01), Ogura
patent: 6317360 (2001-11-01), Kanamori
patent: 6417048 (2002-07-01), Tseng
patent: 6436765 (2002-08-01), Liou et al.
patent: 6596588 (2003-07-01), Chou
patent: 6727168 (2004-04-01), Abbott
patent: 6808989 (2004-10-01), Hurley et al.
patent: 6812529 (2004-11-01), Trivedi et al.
patent: 6844255 (2005-01-01), McDaniel et al.
patent: 6851026 (2005-02-01), Roohparvar
patent: 6862243 (2005-03-01), Chevallier
patent: 6906379 (2005-06-01), Chen et al.
patent: 6958513 (2005-10-01), Wang
patent: 7005338 (2006-02-01), Ding et al.
patent: 7342272 (2008-03-01), Abbott
patent: 2002/0110984 (2002-08-01), Liou et al.
patent: 2002/0177269 (2002-11-01), Chou
patent: 2004/0056299 (2004-03-01), Ding et al.
patent: 2004/0185614 (2004-09-01), Ding
patent: 2004/0248371 (2004-12-01), Wang
patent: 2005/0045940 (2005-03-01), Chen et al.
patent: 2005/0090059 (2005-04-01), Lee et al.
patent: 2005/0169041 (2005-08-01), Wang
patent: 2005/0218442 (2005-10-01), Hieda
patent: 2007/0048935 (2007-03-01), Abbott
patent: 2008/0153233 (2008-06-01), Abbott
patent: 101292351 (2008-10-01), None
patent: WO 2007/027648 (2007-03-01), None
Office Action and Written Opinion dated Sep. 29, 2008, for corresponding EP Application No. 06 802 512.1, filing date Aug. 28, 2006.
Search Report dated Nov. 14, 2008, for corresponding ROC (Taiwan) Patent Application No. 095132034, filing date Aug. 30, 2006.
Restriction Requirement dated Mar. 20, 2007 for U.S. Appl. No. 11/216,970.
Response to Restriction Requirement dated Mar. 20, 2007 for U.S. Appl. No. 11/216,970, filed Apr. 16, 2007.
Office Action dated May 16, 2007 for U.S. Appl. No. 11/216,970.
Response to Office Action dated May 16, 2007 for U.S. Appl. No. 11/216,970, filed Aug. 16, 2007.
Notice of Allowability dated Aug. 28, 2007 for U.S. Appl. No. 11/216,970.
International Search Report for PCT/US2006/033617, filed Aug. 28, 2006.
International Preliminary Report on Patentability for PCT/US2006/033617, filed Aug. 28, 2006.
Office Action for corresponding CN Application No. 200680039369.7, May 8, 2009.
Written Opinion of Corresponding Singapore Pat Appl 200801672-7, Jun. 17, 2009.
Office Action dated Oct. 7, 2010, for corresponding Korean Application No. 10-2008-7007740, filing date Aug. 28, 2006.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Tran Long K
LandOfFree
Flash memory with recessed floating gate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory with recessed floating gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory with recessed floating gate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2739278