Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-08-09

2011-08-09

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S072000, C365S174000, C365S189090

Reexamination Certificate

active

07995377

ABSTRACT:
An object of the present invention is to provide a technique of reducing the power consumption of an entire low power consumption SRAM LSI circuit employing scaled-down transistors and of increasing the stability of read and write operations on the memory cells by reducing the subthreshold leakage current and the leakage current flowing from the drain electrode to the substrate electrode.Another object of the present invention is to provide a technique of preventing an increase in the number of transistors in a memory cell and thereby preventing an increase in the cell area.Still another object of the present invention is to provide a technique of ensuring stable operation of an SRAM memory cell made up of SOI or FD-SOI transistors having a BOX layer by controlling the potentials of the wells under the BOX layers of the drive transistors.

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