Nonvolatile memory element array with storing layer formed...

Details Nonvolatile memory element array with storing layer formed... Nonvolatile memory element array with storing layer formed...

2011-06-14

2011-06-14

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S314000, C257SE27104, C257SE21663

Reexamination Certificate

active

07960770

ABSTRACT:
A lower electrode (22) is provided on a semiconductor chip substrate (26). A lower electrode (22) is covered with a first interlayer insulating layer (27) from above. A first contact hole (28) is provided on the lower electrode (22) to penetrate through the first interlayer insulating layer (27). A low-resistance layer (29) forming the resistance variable layer (24) is embedded to fill the first contact hole (28). A high-resistance layer (30) is provided on the first interlayer insulating layer (27) and the low-resistance layer (29). The resistance variable layer (24) is formed by a multi-layer resistance layer including a single layer of the high-resistance layer (30) and a single layer of the low-resistance layer (29). The low-resistance layer (29) forming the memory portion (25) is isolated from at least its adjacent memory portion (25).

REFERENCES:
patent: 5621247 (1997-04-01), Hirao et al.
patent: 5714400 (1998-02-01), Hirao et al.
patent: 2006/0181317 (2006-08-01), Joo et al.
patent: 2008/0089121 (2008-04-01), Aochi et al.
patent: 08-293686 (1996-11-01), None
patent: 2004-241756 (2004-08-01), None
patent: 2004-319587 (2004-11-01), None
patent: 2004-349689 (2004-12-01), None
patent: 2004-349690 (2004-12-01), None
patent: 2005-317976 (2005-11-01), None
patent: 2006-040946 (2006-02-01), None
patent: 2006-080259 (2006-03-01), None
patent: 2006-229227 (2006-08-01), None
patent: 2008-085071 (2008-04-01), None

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