Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-05

2011-07-05

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

C257S488000, C257S491000, C257S492000, C257S493000, C257S339000

Reexamination Certificate

active

07973382

ABSTRACT:
A gate electrode20and first field plates22ato22dand23are provided on a field oxide film19. The gate electrode20and first field plates22ato22dand23are covered with an insulating film24. A high-voltage wiring conductor28is provided on the insulating film24. A shielding electrode29is provided between the first field plate22apositioned closest to a source side and the high-voltage wiring conductor28.

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K. Shimizu, et al., “A 600V HVIC Process with a built-in EPROM which enables new concept Gate Driving”, ISPSD '04 (Proceedings of the 16thInternational Symposium on Power Semiconductor Devices & ICs), May 24-27, 2004, 5 pages.
U.S. Appl. No. 12/685,180, filed Jan. 11, 2010, Takahashi, et al.

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