Method for fabrication of single crystal diodes for...

Details Method for fabrication of single crystal diodes for... Method for fabrication of single crystal diodes for...

2011-03-08

2011-03-08

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S365000, C438S366000, C438S367000, C438S368000, C438S377000, C438S482000, C438S486000, C438S495000, C438S517000, C257S044000, C257S046000, C257S104000, C257S544000, C257S653000, C257SE31077, C257SE31090, C257SE27069, C257SE29090, C257SE29196

Reexamination Certificate

active

07902051

ABSTRACT:
The present invention, in one embodiment, provides a method of producing a PN junction the method including providing a single crystal substrate; forming an insulating layer on the single crystal substrate; forming a via through the insulating layer to provide an exposed portion of the single crystal substrate; forming amorphous Si on at least the exposed portion of the single crystal substrate; converting at least a portion of the amorphous Si into single crystal Si; and forming dopant regions in the single crystal Si. In one embodiment the diode of the present invention is integrated with a memory device.

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