Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

2011-01-04

2011-01-04

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257SE29300

Reexamination Certificate

active

07863669

ABSTRACT:
A nonvolatile semiconductor memory device includes a gate electrode provided on a channel region of a semiconductor layer and a floating gate provided on a back side of the semiconductor layer with a first insulating layer interposed therebetween.

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T, Sakai et al., “Separation of Bonding Si Islands (SBSI) for LSI Applications,” Meeting Abstract of Second International GiGe Technology and Device Meeting, May 2004, pp. 230-231.

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