Solid-state imaging device

Details Solid-state imaging device Solid-state imaging device

2011-01-18

2011-01-18

Lee, Eugene (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C257SE25032, C257SE27133

Reexamination Certificate

active

07872287

ABSTRACT:
It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention. The solid-state imaging device comprises a signal line formed on the substrate, an island shaped semiconductor placed over the signal line, and a pixel selection line connected to an upper portion of the island shaped semiconductor. The island shaped semiconductor comprises a first semiconductor layer disposed in a lower portion of the island shaped semiconductor and connected to the signal line, a second semiconductor layer disposed adjacent to an upper side of the first semiconductor layer, a gate connected to the second semiconductor layer via an insulating film, an electric charge accumulator comprising a third semiconductor layer connected to the second semiconductor layer and carrying a quantity of electric charges which varies in response to a light reception, and a fourth semiconductor layer disposed adjacent to an upper side of the second semiconductor layer and the third semiconductor layer and connected to the pixel selection line. The solid-state imaging devices are arranged on the substrate in a honeycomb configuration.

REFERENCES:
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Takahashi et al., “A 3.9μm Pixel Pitch VGA Format 10b Digital Image Sensor with 1.5-Transistor/Pixel”, ISSCC Dig. Tech. Papers, pp. 108-109, 2004.
Kasano et al., “A 2.0μm Pixel Pitch MOS Image Sensor with an Amorphous Si Film Color Filter”, ISSCC Dig. Tech. Papers, pp. 348-349 and p603, 2005.
International Search Report issued Jun. 24, 2008 in PCT/JP2008/055231.
Written Opinion of the International Searching Authority issued Jun. 24, 2008 in PCT/JP2008/055231 (with English version).

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