Semiconductor apparatus and production method of the same

Details Semiconductor apparatus and production method of the same Semiconductor apparatus and production method of the same

2011-03-22

2011-03-22

Pert, Evan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27046

Reexamination Certificate

active

07910982

ABSTRACT:
In order to provide a highly integrated semiconductor apparatus and a production method thereof which can avoid the floating of a channel portion that causes a problem when constituting a memory cell from three-dimensional transistors, a semiconductor apparatus includes: multiple three-dimensional transistors each of which includes: a first pillar; a channel portion provided at the first pillar; diffused layers formed at both an upper portion and a lower portion of the channel portion; and a gate electrode provided around the channel portion via a gate insulation film; and a second pillar which is electrically conductive, wherein the multiple three-dimensional transistors are arranged on a well area while surrounding the second pillar, the multiple three dimensional transistors share the second pillar, and the channel portions of the multiple three dimensional transistors are each connected to the second pillar by a channel connection portion. In addition, six three-dimensional transistors preferably share the second pillar which is a single pillar.

REFERENCES:
patent: 6150687 (2000-11-01), Noble et al.
patent: 7098478 (2006-08-01), Takaura et al.
patent: 2006/0081884 (2006-04-01), Abbott et al.
patent: 04176168 (1992-06-01), None
patent: 05136374 (1993-06-01), None
patent: 05160408 (1993-06-01), None

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