Semiconductor device having SiGe semiconductor regions

Details Semiconductor device having SiGe semiconductor regions Semiconductor device having SiGe semiconductor regions

2011-07-26

2011-07-26

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257SE27062

Reexamination Certificate

active

07986013

ABSTRACT:
A semiconductor device includes a first semiconductor region having a channel region, and containing silicon as a main component, second semiconductor regions sandwiching the first semiconductor region, formed of SiGe, and applying stress to the first semiconductor region, cap layers provided on the second semiconductor regions, and formed of silicon containing carbon or SiGe containing carbon, and silicide layers provided on the cap layers, and formed of nickel silicide or nickel-platinum alloy silicide.

REFERENCES:
patent: 6492216 (2002-12-01), Yeo et al.
patent: 2005/0116360 (2005-06-01), Huang et al.
patent: 2007/0200179 (2007-08-01), Chen
patent: 2010/0001317 (2010-01-01), Chen et al.
patent: 2006-229071 (2006-08-01), None
Zaima et al., “Interfacial Reaction and Electrical Properties in Ni/Si and Ni/SiGe(C) Contacts”, Applied Surface Science, vol. 224, pp. 215-221, (2004).
Nakatsuka et al., “Improvement in NiSi/Si Contact Properties With C-Implantation”, Microelectric Engineering, vol. 82, pp. 479-484, (2005).

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