Semiconductor device with a composite gate dielectric layer and

Details Semiconductor device with a composite gate dielectric layer and Semiconductor device with a composite gate dielectric layer and

1998-09-30

2000-12-19

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257411, 257310, H01L 2978

Patent

active

061630608

ABSTRACT:
The present invention is directed to a new semiconductor device and a method for making same. The new semiconductor device is comprised of a gate barrier layer, a composite gate dielectric layer, a conductor layer, and at least one source/drain region formed in aemiconducting substrate. The method comprises forming the gate barrier layer, composite gate dielectric layer and conductor layer, patterning those layers, and forming at least one source/drain region in said semiconductor substrate. The composite gate dielectric layer is comprised of at least two different materials having different dielectric constants.

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