Method for making semiconductor apparatus and semiconductor...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S158000, C257SE21414, C257SE29294

Reexamination Certificate

active

07955916

ABSTRACT:
A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.

REFERENCES:
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 5612235 (1997-03-01), Wu et al.
patent: 5670400 (1997-09-01), Lee et al.
patent: 6043512 (2000-03-01), Adachi
patent: 6294441 (2001-09-01), Yamazaki
patent: 6380011 (2002-04-01), Yamazaki et al.
patent: 6426245 (2002-07-01), Kawasaki et al.
patent: 6605496 (2003-08-01), Yamazaki
patent: 6649218 (2003-11-01), Qian
patent: 6838324 (2005-01-01), Yamazaki et al.
patent: 6953731 (2005-10-01), Shinriki et al.
patent: 7101740 (2006-09-01), Young
patent: 7208787 (2007-04-01), Manabe
patent: 7309616 (2007-12-01), Nagashima et al.
patent: 7323368 (2008-01-01), Takayama et al.
patent: 7332382 (2008-02-01), Han
patent: 2003/0011022 (2003-01-01), Manabe
patent: 2005/0233558 (2005-10-01), Yamamoto et al.
patent: 2006/0079042 (2006-04-01), Han
patent: 2006/0088961 (2006-04-01), Jung et al.
patent: 2007/0069401 (2007-03-01), Kakehata
patent: 2008/0105876 (2008-05-01), Han
patent: 2008/0124850 (2008-05-01), Takayama et al.
patent: 2008/0283842 (2008-11-01), Hayashi et al.
patent: 2009/0061613 (2009-03-01), Choi et al.
patent: 2009/0280600 (2009-11-01), Hosono et al.
patent: 06-291034 (1994-10-01), None
patent: 2814319 (1998-08-01), None
patent: 2002-057155 (2002-02-01), None
patent: 2008-288424 (2008-11-01), None
patent: 2008056955 (2008-06-01), None
Chinese Office Action issued on Jun. 5, 2009 in connection with Chinese Application No. 200810097146.7.

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