Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-06-21
2000-12-19
Smith, Matthew
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257358, 257359, 257360, 257363, 257546, H01L 2362
Patent
active
06163056&
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a major surface, a source region of a second conductivity type, a drain region of the second conductivity type, and a first insulating layer formed over the major surface between the source region and the drain region. The device also includes a control electrode layer formed over the first insulating layer and a second insulating layer formed over the major surface. The device also includes a first wiring layer formed in the first contact hole and a second wiring layer formed in the second contact hole and connected to a pad and an internal circuitry, wherein the internal circuitry executes a predetermined operation and wherein the pad receives a signal from the internal circuitry or a signal from an external device.
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Keshavan Belur
OKI Electric Industry Co., Ltd.
Smith Matthew
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