Semiconductor device having opposite-polarity region under chann

Details Semiconductor device having opposite-polarity region under chann Semiconductor device having opposite-polarity region under chann

1997-11-05

2000-12-19

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257403, 257607, H01L 2976, H01L 29167

Patent

active

061630535

ABSTRACT:
A semiconductor device and fabrication method thereof are provided, which include an opposite-polarity region formed in a predetermined location under a gate channel region, having a conductive property opposite to that of a surrounding well region. The gate voltage is controlled so that a second depleted layer region is induced concurrently with the opposite-polarity region by the applied gate voltage and can be coupled with a first depleted region which is formed under the channel region and is controllable by the applied gate voltage. In this structure of the semiconductor device, drain current of the device is rendered more responsive to the applied gate voltage, and leakage currents at a certain applied drain voltage and at zero gate voltage are reduced, thereby reducing the standby currents of the semiconductor device.

REFERENCES:
patent: 4916500 (1990-04-01), Yazawa et al.
patent: 5025293 (1991-06-01), Seki
patent: 5489795 (1996-02-01), Yoshimimura et al.
patent: 5548143 (1996-08-01), Lee
patent: 5675172 (1997-10-01), Miyamoto et al.
patent: 5712501 (1998-01-01), Davies et al.
patent: 5719422 (1998-02-01), Burr et al.
patent: 5986314 (1999-11-01), Seshadri et al.

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