Semiconductor device including liner insulating film

Details Semiconductor device including liner insulating film Semiconductor device including liner insulating film

2011-06-21

2011-06-21

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S270000, C257S392000, C257S632000, C257S638000, C257S900000, C257SE21626, C257SE21632, C257SE21640, C257SE27061, C438S981000

Reexamination Certificate

active

07964917

ABSTRACT:
A semiconductor device includes a plurality of first MIS transistors and a plurality of second MIS transistors formed on a semiconductor substrate and a liner insulating film applying stress along the gate length direction. Each of the first MIS transistors includes first L-shaped sidewalls each having an L-shaped cross-sectional shape, and each of the second MIS transistors includes second L-shaped sidewalls each having an L-shaped cross-sectional shape and outer sidewalls. The minimum thickness of a part of the liner insulating film located on each of second source/drain regions of the second MIS transistor is larger than the minimum thickness of a part thereof located on each of first source/drain regions of the first MIS transistor.

REFERENCES:
patent: 2004/0135234 (2004-07-01), Morin et al.
patent: 2004/0217448 (2004-11-01), Kumagai et al.
patent: 2005/0093030 (2005-05-01), Doris et al.
patent: 2007/0090465 (2007-04-01), Suzuki et al.
patent: 2007/0122966 (2007-05-01), Hoentschel et al.
Ito, S., et al., “Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design,” 0-7803-6441-4/00, 2000, IEEE.

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