Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-02-05
2000-12-19
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, H01L 27108
Patent
active
061630462
ABSTRACT:
Provided are a semiconductor device which can prevent occurrence of inconvenience caused by overetching resulting from difference between depths of contact holes simultaneously formed in a memory cell part and a peripheral circuit part and inconvenience resulting from extreme increase of an aspect ratio of the contact holes, and a method of fabricating the same. An aluminum wire (22) provided on an interlayer insulating film (20) of a peripheral circuit part is electrically connected with semiconductor diffusion regions, i.e., N.sup.+ -type source/drain regions (91, 92) (first semiconductor regions) and P.sup.+ -type source/drain regions (81, 82) (second semiconductor regions) by a bit line contact hole (12) formed through the interlayer insulating film (11) to have a buried layer (25) therein and an aluminum wire contact hole (21B) formed through other interlayer insulating films (14, 20) to have a buried layer (27) therein.
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Okumura Yoshinori
Shirahata Masayoshi
Mitsubishi Denki & Kabushiki Kaisha
Nadav Ori
Thomas Tom
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