Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2011-06-21

2011-06-21

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S774000, C257S773000, C257SE29111, C257SE29112, C438S578000, C438S640000

Reexamination Certificate

active

07964501

ABSTRACT:
A method of fabricating a semiconductor device includes providing a semiconductor substrate including a first landing plug and a second landing plug. A bit line is formed over the semiconductor substrate. The bit line is electrically coupled to the first landing plug. A stacked structure of an etch stop film and an interlayer insulating film is deposited over the semiconductor substrate including the bit line. The stacked structure is selectively etched using a contact mask to form a contact hole having an upper part that is wider than a lower part of the contact hole. The contact hole exposes the second landing plug. A contact plug is formed over the contact hole. The contact plug is electrically coupled to the second landing plug.

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