Semiconductor wafer of single crystalline silicon and...

Details Semiconductor wafer of single crystalline silicon and... Semiconductor wafer of single crystalline silicon and...

2011-01-11

2011-01-11

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C438S482000, C257SE21415

Reexamination Certificate

active

07868325

ABSTRACT:
Semiconductor wafer of monocrystalline silicon contain fluorine, the fluorine concentration being 1·1010to 1·1016atoms/cm3, and is free of agglomerated intrinsic point defects whose diameter is greater than or equal to a critical diameter. The semiconductor wafers are produced by providing a melt of silicon which is doped with fluorine, and crystallizing the melt to form a single crystal which contains fluorine within the range of 1·1010to 1·1016atoms/cm3, at a growth rate at which agglomerated intrinsic point defects having a critical diameter or larger would arise if fluorine were not present or present in too small an amount, and separating semiconductor wafers from the single crystal.

REFERENCES:
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patent: 2003/0008479 (2003-01-01), Chen et al.
patent: 32 32 259 (1984-01-01), None
patent: 52138072 (1977-11-01), None

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