Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21009, C257SE21008, C257SE27104, C257SE21662, C257SE21679
Reexamination Certificate
active
07960774
ABSTRACT:
A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
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Written Opinion of the International Searching Authority: PCT/KR2007/006062.
International Search Report: PCT/KR2007/006062.
Ah Chil Seong
Choi Sung-Yool
Kim Ansoon
Ryu Min Ki
Yu Han Young
Chi Suberr
Electronics and Telecommunications Research Institute
Ladas & Parry LLP
Vu David
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