Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-18
2011-01-18
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S623000, C257SE29255
Reexamination Certificate
active
07872310
ABSTRACT:
A semiconductor structure and a system for fabricating an integrated circuit chip. The semiconductor structure includes: a buried oxide layer on a semiconductor wafer; a thin fin structure on the buried oxide layer, wherein the thin fin structure includes a first hard mask on a semiconductor fin, wherein the semiconductor fin is disposed between the first hard mask and a surface of the buried oxide layer; and a thick mesa structure on the buried oxide layer, and wherein the thick mesa structure includes a semiconductor mesa. The system for fabricating an integrated circuit chip enables: providing a buried oxide layer on and in direct mechanical contact with a semiconductor wafer; and concurrently forming at least one fin-type field effect transistor and at least one thick-body device on the buried oxide layer.
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Abadeer Wagdi W.
Brown Jeffrey S.
Fried David M.
Gauthier Jr. Robert J.
Nowak Edward J.
Fan Michele
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
Smith Matthew S
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