Nonvolatile semiconductor memory and manufacturing method...

Details Nonvolatile semiconductor memory and manufacturing method... Nonvolatile semiconductor memory and manufacturing method...

2011-04-19

2011-04-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300

Reexamination Certificate

active

07928497

ABSTRACT:
A nonvolatile semiconductor memory according to examples of the present invention comprises a memory cell and a peripheral transistor. The memory cell has a first intergate insulating film having a multilayer structure and provided on a floating gate electrode and an isolation insulating layer. The peripheral transistor has a second intergate insulating film having a multilayer structure and provided on a first gate electrode and a second isolation insulating layer. The first and second intergate insulating films have the same structure, and a lowermost insulating layer of the first intergate insulating film on the first isolation insulating layer is thinner than a lowermost insulating layer of the second intergate insulating film on the second isolation insulating layer.

REFERENCES:
patent: 6265739 (2001-07-01), Yaegashi et al.
patent: 6927139 (2005-08-01), Tanaka et al.
patent: 7842993 (2010-11-01), Yaegashi
patent: 2005/0029579 (2005-02-01), Mori
patent: 2005/0045966 (2005-03-01), Yamashita et al.
patent: 2006/0197226 (2006-09-01), Matsui et al.
patent: 2006/0240619 (2006-10-01), Ozawa et al.
patent: 2007/0020957 (2007-01-01), Mizushima et al.
patent: 2007/0196985 (2007-08-01), Ozawa et al.
patent: 8-264667 (1996-10-01), None
patent: 10-154761 (1998-06-01), None
patent: 2000-174149 (2000-06-01), None
patent: 2006-196843 (2006-07-01), None
patent: 2006-310393 (2006-11-01), None
U.S. Appl. No. 12/331,869, filed Dec. 10, 2008, Yaegashi.

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