Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-04-05
2011-04-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185220, C365S185280
Reexamination Certificate
active
07920420
ABSTRACT:
A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.
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Harness & Dickey & Pierce P.L.C.
Ho Hoai V
Samsung Electronics Co,. Ltd.
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