Multi bit flash memory device and method of programming the...

Static information storage and retrieval – Floating gate – Multiple values

Reexamination Certificate

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C365S185220, C365S185280

Reexamination Certificate

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07920420

ABSTRACT:
A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.

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