Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-07-05
2011-07-05
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S194000, C365S227000
Reexamination Certificate
active
07974140
ABSTRACT:
A semiconductor device includes a mode register and a plurality of voltage generators in connection with a plurality of banks. Based on an operation mode set to the mode register, the voltage generators are selectively driven in response to an access to each bank and a CAS latency number defining a delay time between the input timing of an external command and the input/output timing of data of each bank. The number of voltage generators being driven is controlled based on the CAS latency number so that an adequate internal voltage is supplied to the peripheral circuitry, thus adjusting the current consumption without increasing the power consumption.
REFERENCES:
patent: 5404338 (1995-04-01), Murai et al.
patent: 5963467 (1999-10-01), Miyatake et al.
patent: 6373753 (2002-04-01), Proebsting
patent: 64-42850 (1982-02-01), None
Elpida Memory Inc.
McDermott Will & Emery LLP
Nguyen Tuan T.
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