Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S197000, C438S233000, C438S664000, C257SE21199, C257SE21438, C257SE21622
Reexamination Certificate
active
07960280
ABSTRACT:
An improved method of forming a fully silicided (FUSI) gate in both NMOS and PMOS transistors of the same MOS device is disclosed. In one example, the method comprises forming a first silicide in at least a top portion of a gate electrode of the PMOS devices and not over the NMOS devices. The method further comprises concurrently forming a second silicide in at least a top portion of a gate electrode of both the NMOS and PMOS devices, and forming a FUSI gate silicide of the gate electrodes. In one embodiment, the thickness of the second silicide is greater than the first silicide by an amount which compensates for a difference in the rates of silicide formation between the NMOS and PMOS devices.
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Johnson Frank S.
Mehrad Freidoon
Brady III Wade J.
Franz Warren L.
Lee Cheung
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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