Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-01-04
2011-01-04
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S289000, C438S545000, C438S546000, C438S370000, C438S377000, C257SE21135
Reexamination Certificate
active
07863170
ABSTRACT:
A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried zone, a second zone having a second conductivity type that is different from the first conductivity type and above the first zone, and a third zone having the first conductivity type that is above the second zone. The buried zone includes first and second implantation regions that are formed via first and second implantations that are performed using a mask. The buried zone, the first zone, the second zone and the third zone are parts of a first transistor structure.
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Kraft Jochen
Löffler Bernard
Röhrer Georg
austriamicrosystems AG
Fish & Richardson P.C.
Novacek Christy L
Smith Zandra
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