Semiconductor device with increased channel area

Details Semiconductor device with increased channel area Semiconductor device with increased channel area

2011-07-12

2011-07-12

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S259000, C257S262000, C257S270000, C257S332000, C257SE21662, C257SE21667, C257SE27067, C257SE29242, C257SE29255, C438S197000, C438S272000, C438S280000, C438S284000, C438S294000, C438S296000

Reexamination Certificate

active

07977749

ABSTRACT:
A semiconductor device includes an active region defining at least four surfaces, the four surfaces including first, second, third, and fourth surfaces, a gate insulation layer formed around the four surfaces of the active region, and a gate electrode formed around the gate insulation layer and the four surfaces of the active region.

REFERENCES:
patent: 5804848 (1998-09-01), Mukai
patent: 6794699 (2004-09-01), Bissy et al.
patent: 7101763 (2006-09-01), Anderson et al.
patent: 7390701 (2008-06-01), Cheng et al.
patent: 7456476 (2008-11-01), Hareland et al.
patent: 2005/0142700 (2005-06-01), Cheng et al.
patent: 1577850 (2005-02-01), None
patent: 05-218415 (1993-08-01), None
patent: 05-218416 (1993-08-01), None
patent: I241718 (2005-10-01), None

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