Semiconductor storage device and manufacturing method thereof

Details Semiconductor storage device and manufacturing method thereof Semiconductor storage device and manufacturing method thereof

2011-08-09

2011-08-09

Dinh, Son T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000

Reexamination Certificate

active

07995376

ABSTRACT:
A semiconductor storage device includes a plurality of integrated memory cells. Each cell includes a first inverter having a first driver transistor and a first load transistor which are formed on a semiconductor substrate in order to form a first storage node, a second inverter having a second driver transistor and a second load transistor which are formed on the semiconductor substrate in order to form a second storage node, a first transfer transistor connected between the first storage node and a bit line to serve as a transistor connecting the memory cell to the bit line, and a second transfer transistor connected between the second storage node and a complementary-bit line to serve as a transistor connecting the memory cell to the complementary-bit line.

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Japanese Patent Office, Office Action issued in Patent Application JP 2007-319327, on Nov. 4, 2009.

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