Semiconductor device, method for fabricating the same, and...

Details Semiconductor device, method for fabricating the same, and... Semiconductor device, method for fabricating the same, and...

2011-06-07

2011-06-07

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S355000, C323S282000, C323S283000

Reexamination Certificate

active

07956422

ABSTRACT:
A semiconductor device, a method for fabricating the same, and a transformer circuit using the same are disclosed. The semiconductor device includes a trench metal oxide semiconductor (MOS) transistor for switching a load of current supplied from a power source, and a boost controller for controlling driving of the trench MOS transistor, the boost controller being formed with the trench MOS transistor on a single semiconductor device to form an integrated structure. In this structure, the physical space of the semiconductor device is reduced, thereby reducing the size of a DC-DC transformer circuit using the semiconductor device. It is possible to obtain finely-adjusted output values by controlling values of the ripple current and ripple voltage. A desired operational stability according to a variation in temperature can also be secured.

REFERENCES:
patent: 2006/0006432 (2006-01-01), Shiraishi et al.
patent: 2009/0015228 (2009-01-01), Sato et al.
patent: 2006-93184 (2006-04-01), None
Naohiko Morota; “Semiconductor Device and Switching Power Supply Device Using the Same”, Patent Abstracts of Japan; Publication No. 2006-093184; Publication Date: Jun. 4, 2006; Japan Patent Office, Japan.

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