Structure, design structure and method of manufacturing dual...

Details Structure, design structure and method of manufacturing dual... Structure, design structure and method of manufacturing dual...

2011-06-21

2011-06-21

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257SE29128, C257SE29132, C257SE29134

Reexamination Certificate

active

07964922

ABSTRACT:
A structure, design structure and method of manufacturing is provided for a dual metal gate Vt roll-up structure, e.g., multi-work function metal gate. The multi-work function metal gate structure comprises a first type of metal with a first work function in a central region and a second type of metal with a second work function in at least one edge region adjacent the central region. The first work-function is different from the second work function.

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Non-Final Office Action dated Sep. 30, 2010, in U.S. Appl. No. 12/192,491.

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