Semiconductor device having a field effect transistor using...

Details Semiconductor device having a field effect transistor using... Semiconductor device having a field effect transistor using...

Filed on

2011-06-07

Date issued

2011-06-07

Examiner

Trinh, Michael (Department: 2822)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S408000, C257S410000, C257SE21433

Type

Reexamination Certificate

Status

active

Patent number

07956413

Description

ABSTRACT:
In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

REFERENCES:
patent: 6027976 (2000-02-01), Gardner et al.
patent: 6746926 (2004-06-01), Yu
patent: 6913980 (2005-07-01), Wu et al.
patent: 7029967 (2006-04-01), Zhao et al.
patent: 7157779 (2007-01-01), Nishibe et al.
patent: 2003/0042548 (2003-03-01), Maeda et al.
patent: 2003/0067045 (2003-04-01), Sugiyama et al.
patent: 2003/0178685 (2003-09-01), Saiki
patent: 2004/0018690 (2004-01-01), Muraoka
patent: 2004/0169222 (2004-09-01), Horiguchi
patent: 2006/0121740 (2006-06-01), Sakai et al.
patent: 2003-069011 (2003-03-01), None
patent: 2003-179227 (2003-06-01), None
patent: 2003-273241 (2003-09-01), None
patent: 2003-297826 (2003-10-01), None
patent: 2004-266019 (2004-09-01), None
patent: 2004-304053 (2004-10-01), None
patent: WO 2004/017418 (2004-02-01), None
English translation of Japanese Notice of Reasons for Rejection issued in Japanese Patent Application No. JP 2004-362971 dated Dec. 15, 2009.
A. Kaneko, et al., “Flatband Voltage Shift Caused by Dopants Diffused from Poly-Si Gate Electrode in Poly-Si /HfSiO/SiO2/Si”, Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials, Tokyo, 2003, pp. 56-57.

Affiliated with

Also associated with

Rating

Semiconductor device having a field effect transistor using... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a field effect transistor using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a field effect transistor using... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2724942