Recessed-gate transistor device having a dielectric layer...

Details Recessed-gate transistor device having a dielectric layer... Recessed-gate transistor device having a dielectric layer...

2011-08-09

2011-08-09

Lebentritt, Michael (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C430S239000

Reexamination Certificate

active

07994559

ABSTRACT:
A recessed-gate transistor device includes a gate electrode embedded in a gate trench formed in a semiconductor substrate, wherein the gate trench includes a vertical sidewall and a U-shaped bottom. A source region is provided at one side of the gate trench within the semiconductor substrate. A drain region is provided at the other side thereof. An asymmetric gate dielectric layer is formed between the gate electrode and the semiconductor substrate. The asymmetric gate dielectric layer has a first thickness between the gate electrode and the drain region and a second thickness between the gate electrode and the source region, wherein the first thickness is thicker than the second thickness.

REFERENCES:
patent: 5640034 (1997-06-01), Malhi
patent: 6815307 (2004-11-01), Hsu et al.
patent: 6872629 (2005-03-01), Hsiao
patent: 2002/0094622 (2002-07-01), Sneelal et al.
patent: 2007/0246755 (2007-10-01), Lee
patent: 2010/0264478 (2010-10-01), Rossi et al.

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