Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2011-04-12

2011-04-12

Luu, Chuong A (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262, C257SE21410

Reexamination Certificate

active

07923771

ABSTRACT:
A semiconductor device (10) of the present invention includes: a drift layer (5) that includes a reference concentration layer (4) including an impurity of a first conductive type at a first reference concentration and a low concentration layer (3) provided under the reference concentration layer and including an impurity of the first conductive type at a concentration lower than the first reference concentration; a gate electrode (20) that is formed on an upper surface of the reference concentration layer; a pair of source regions (Sa and 8b) that are respectively provided on the reference concentration layer in the vicinity of ends of the gate electrode and include an impurity of the first conductive type at a concentration higher than the first reference concentration.

REFERENCES:
patent: 6703665 (2004-03-01), Nakamura
patent: 6849880 (2005-02-01), Saito et al.
patent: 6972458 (2005-12-01), Suzuki et al.
patent: 6982459 (2006-01-01), Suzuki et al.
patent: 2003/0089947 (2003-05-01), Kawaguchi et al.
patent: 2007/0069323 (2007-03-01), Kunori et al.
patent: 2001-60685 (2001-03-01), None
patent: 2001-102577 (2001-04-01), None
patent: 2003-152180 (2003-05-01), None
patent: 3484690 (2003-10-01), None
patent: 2005-85990 (2005-03-01), None
patent: 2005/093844 (2005-03-01), None
International Search Report for PCT/JP2007/073676, mailed Mar. 11, 2008.

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