Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-10
1998-09-01
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, 257376, 257510, H01L 27092, H01L 2900
Patent
active
058014233
ABSTRACT:
The invention is a method for creating a portion of an integrated circuit on a semiconductor wafer. The invention comprises doping a substrate to form a doped well region having an opposite conductivity type than the substrate. Separate photomasking steps are used to define N-channel and P-channel metal oxide semiconductor (MOS) transistor gates. A trench is formed near the well without using additional masking steps. The trench improves the latch up immunity of the device. The invention is also the apparatus created by the method and comprises a trench positioned in the substrate to interrupt the conduction of minority carriers between two regions of the substrate. Thus, the invention improves latch up immunity without additional process complexity.
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Jackson Jerome
Micro)n Technology, Inc.
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