Semiconductor device including schottky barrier diode and...

Details Semiconductor device including schottky barrier diode and... Semiconductor device including schottky barrier diode and...

2011-06-28

2011-06-28

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S475000, C257S328000

Reexamination Certificate

active

07968953

ABSTRACT:
A semiconductor device includes a substrate, a plurality of first columns having a first conductivity type, a plurality of second columns having a second conductivity type, a first electrode, and a second electrode. The first columns and the second columns are alternately arranged on the substrate to provide a super junction structure. The first electrode is disposed on the super junction structure, forms schottky junctions with the first columns, and forms ohmic junctions with the second columns. The second electrode is disposed on the substrate on an opposite side of the super junction structure. At least a part of the substrate and the super junction structure has lattice defects to provide a lifetime control region at which a lifetime of a minority carrier is controlled to be short.

REFERENCES:
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patent: 6693323 (2004-02-01), Sato et al.
patent: 2005/0156283 (2005-07-01), Tokuda et al.
patent: 2005/0258479 (2005-11-01), Ono et al.
patent: 2006/0237813 (2006-10-01), Hshieh et al.
patent: 2007/0120201 (2007-05-01), Yamaguchi et al.
patent: A-2000-349304 (2000-12-01), None
patent: A-2002-076370 (2002-03-01), None

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