Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000, C257S305000, C257S306000, C257S329000, C257SE27096
Reexamination Certificate
active
07911006
ABSTRACT:
A process and an architecture related to a vertical MOSFET device and a capacitor for use in integrated circuits. Generally, the integrated circuit structure includes a semiconductor layer with a major surface formed along a plane thereof and further including a first doped region formed in the surface. A second doped region of a different conductivity type than the first doped region is positioned over the first region. A third doped region of a different conductivity type than the second region is positioned over the second region. In one embodiment of the invention, a semiconductor device includes a first layer of semiconductor material and a first field-effect transistor having a first source/drain region formed in the first layer. A channel region of the transistor is formed over the first layer and an associated second source/drain region is formed over the channel region. The integrated circuit further includes a capacitor having a bottom plate, dielectric layer and a top capacitor plate. In an associated method of manufacture, a first device region, selected from the group consisting of the source region and a drain region of a field-effect transistor is formed on a semiconductor layer. A first field-effect transistor gate region is formed over the first device region. A capacitor comprising top and bottom layers with a dielectric layer disposed therebetween, is also formed on the semiconductor layer. In another embodiment, the capacitor layers are formed within a trench or window formed in the semiconductor layer.
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Chaudhry Samir
Layman Paul Arthur
McMacken John Russell
Thomson J. Ross
Zhao Jack Qingsheng
Agere Systems Inc.
Lee Eugene
LandOfFree
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