Spintronic devices with integrated transistors

Details Spintronic devices with integrated transistors Spintronic devices with integrated transistors

2011-08-23

2011-08-23

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000, C365S148000

Reexamination Certificate

active

08004882

ABSTRACT:
The semiconductor industry seeks to replace traditional volatile memory devices with improved non-volatile memory devices. The increased demand for a significantly advanced, efficient, and non-volatile data retention technique has driven the development of integrated Giant-Magneto-resistive (GMR) structures. The present teachings relates to integrated latch memory and logic devices and, in particular, concerns a spin dependent logic device that may be integrated with conventional semiconductor-based logic devices to construct high-speed non-volatile static random access memory (SRAM) cells.

REFERENCES:
patent: 3573485 (1971-04-01), Ballard
patent: 4132904 (1979-01-01), Harai
patent: 4470873 (1984-09-01), Nakamura
patent: 4751677 (1988-06-01), Daughton et al.
patent: 4887236 (1989-12-01), Schloemann
patent: 5595830 (1997-01-01), Daughton
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650887 (1997-07-01), Dovek et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5654566 (1997-08-01), Johnson
patent: 5695864 (1997-12-01), Slonczewski
patent: 5701222 (1997-12-01), Gill et al.
patent: 5701223 (1997-12-01), Fontana, Jr. et al.
patent: 5702831 (1997-12-01), Chen et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 6147922 (2000-11-01), Hurst, Jr. et al.
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6269027 (2001-07-01), Hurst, Jr. et al.
patent: 6304477 (2001-10-01), Naji
patent: 6317359 (2001-11-01), Black, Jr. et al.
patent: 6343032 (2002-01-01), Black, Jr. et al.
patent: 6392924 (2002-05-01), Liu et al.
patent: 6438026 (2002-08-01), Gillies et al.
patent: 6493259 (2002-12-01), Swanson et al.
patent: 6515895 (2003-02-01), Naji
patent: 6542000 (2003-04-01), Black et al.
patent: 6693826 (2004-02-01), Black, Jr. et al.
patent: 6714441 (2004-03-01), Fulkerson et al.
patent: 6717844 (2004-04-01), Ohtani
patent: 6724654 (2004-04-01), Swanson et al.
patent: 6917540 (2005-07-01), Ooishi
patent: 6927995 (2005-08-01), Nickel et al.
patent: 6944050 (2005-09-01), Kang et al.
patent: 7038939 (2006-05-01), Amano et al.
patent: 7184301 (2007-02-01), Sugibayashi et al.
patent: 7339818 (2008-03-01), Katti et al.
patent: 2002/0064067 (2002-05-01), Inui
patent: 0 293 231 (1988-11-01), None
patent: 0 776 011 (1997-05-01), None
patent: WO 98/20496 (1998-05-01), None
Magnetoelectronics[online] [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL: http://www.ipm.virginia.edu/research/ PVD/Pubs/thesis7/chapter2.PDF> Chapter 2, pp. 7-34.
Lee, et al.,Separation of Contributions to Spin Valve Interlayer Exchange Coupling Field by Temperature Dependent Coupling Field Measurements, [online] 46thMMM Conference, Seattle, Washington 2001 pp. 1-16 [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL: http://www.andrew.cmu.edu/˜zlee/mmm.pdf>.
Non-Volatile Memory(MRAM)ANXXX, [online] Honeywell <retrieved on Nov. 19, 2001> <URL: http://www.ssec.honeywell.com/avionics/h—gmr.pdf> pp. 1-4.
Daughton, James M.,Advanced MRAM Concepts, [online] Article from NVE Corporation, Feb. 7, 2001, pp. 1-6, <retrieved on Jan. 25, 2002> Retrieved from the Internet: <URL: http://www.nve.com/otherbiz/mram.pdf>.

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