Multiphase charge coupled device solid-state image sensors

Details Multiphase charge coupled device solid-state image sensors Multiphase charge coupled device solid-state image sensors

1996-12-18

1998-09-01

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257231, H01L 27148

Patent

active

058014098

ABSTRACT:
Charge coupled device (CCD) solid-state image sensors comprise a substrate including a plurality of sensor groups. Each sensor group consists of N photodiodes and 2N+1 transfer electrodes, where N is at least two. By providing, for example, two photodiodes and five transfer electrodes in a group, improved area efficiency may be provided along with efficient manufacturing and driving. Three insulated patterned conductive layers are formed on a gate insulating layer, to define the first through fifth transfer electrodes on the transfer region.

REFERENCES:
patent: 4581539 (1986-04-01), Kimura
patent: 4689687 (1987-08-01), Koike et al.
patent: 4810901 (1989-03-01), Yamada
patent: 5326997 (1994-07-01), Nakanishi
patent: 5434437 (1995-07-01), Itakura et al.
patent: 5528291 (1996-06-01), Oda

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