Semiconductor device having vertical charge-compensated...

Details Semiconductor device having vertical charge-compensated... Semiconductor device having vertical charge-compensated...

2011-06-14

2011-06-14

Parker, Ken A (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S332000, C257S333000, C257S339000, C257S342000, C257S409000, C257S509000

Reexamination Certificate

active

07960781

ABSTRACT:
In one embodiment, a semiconductor device is formed having vertical localized charge-compensated trenches, trench control regions, and sub-surface doped layers. The vertical localized charge-compensated trenches include at least a pair of opposite conductivity type semiconductor layers. The trench control regions are configured to provide a generally vertical channel region electrically coupling source regions to the sub-surface doped layers. The sub-surface doped layers are further configured to electrically connect the drain-end of the channel to the vertical localized charge compensation trenches. Body regions are configured to isolate the sub-surface doped layers from the surface of the device.

REFERENCES:
patent: 4899199 (1990-02-01), Gould
patent: 5216275 (1993-06-01), Chen
patent: 5418185 (1995-05-01), Todd et al.
patent: 5438215 (1995-08-01), Tihanyi
patent: 5571738 (1996-11-01), Krivokapic
patent: 5859465 (1999-01-01), Spring et al.
patent: 5872421 (1999-02-01), Potter
patent: 5886383 (1999-03-01), Kinzer
patent: 5998288 (1999-12-01), Gardner et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 6191446 (2001-02-01), Gardner et al.
patent: 6210999 (2001-04-01), Gardner et al.
patent: 6255152 (2001-07-01), Chen
patent: 6274904 (2001-08-01), Tihanyi
patent: 6278165 (2001-08-01), Oowaki et al.
patent: 6355955 (2002-03-01), Gardner et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6465869 (2002-10-01), Ahlers et al.
patent: 6479352 (2002-11-01), Blanchard
patent: 6509240 (2003-01-01), Ren et al.
patent: 6512267 (2003-01-01), Kinzer et al.
patent: 6541817 (2003-04-01), Hurkx et al.
patent: 6576516 (2003-06-01), Blanchard
patent: 6593619 (2003-07-01), Blanchard
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6664590 (2003-12-01), Deboy
patent: 6693338 (2004-02-01), Saitoh et al.
patent: 6710418 (2004-03-01), Sapp
patent: 6756273 (2004-06-01), Hadizad et al.
patent: 6878989 (2005-04-01), Izumisawa et al.
patent: 6919610 (2005-07-01), Saitoh et al.
patent: 6982193 (2006-01-01), Hossain et al.
patent: 7002187 (2006-02-01), Husher
patent: 7019377 (2006-03-01), Tsuchiko
patent: 7067394 (2006-06-01), So
patent: 7176524 (2007-02-01), Loechelt et al.
patent: 7253477 (2007-08-01), Loechelt et al.
patent: 7285823 (2007-10-01), Loechelt et al.
patent: 7411266 (2008-08-01), Tu et al.
patent: 7535056 (2009-05-01), Komachi
patent: 2003/0209750 (2003-11-01), Deboy et al.
patent: 2006/0024890 (2006-02-01), Calafut
patent: 2007/0034947 (2007-02-01), Loechelt et al.
patent: 2007/0052061 (2007-03-01), Deboy et al.
patent: 2007/0278565 (2007-12-01), Tu et al.
patent: WO02/19433 (2002-03-01), None
patent: WO2005/096389 (2005-10-01), None
patent: WO2006/025035 (2006-03-01), None
Semiconductor Components Industries, LLC, “NUF6106FCT1, 6 Channel EMI Pi-Filter Array with ESD Protection”, Data Sheet, Mar. 2004—Rev. 0, Publication Order No. NUF6106FC/D.
M. Rub, D. Ahlers, J. Baumgartl, G. Deboy, W. Friza, O. Haberlen and I. Steinigke,“A Novel Trench Concept for the Fabrication of Compensation Devices,” pp. 203-206., ISPSD 2003, Apr. 14-17, Cambridge, UK.
Deboy, G., et al., “A new Generation of High Voltage MOSFETs Breaks the Limit Line of Silicon”, IEDM '98, Dec. 6-9, 1998, p. 683-5.
Lorenz, L., et al., “COOLMOS (TM)—a new Milestone in High Voltage Power MOS”, ISPSD '99, May 26-28, 1999, p. 3-10.

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