Manufacturing method of contact structure

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C257SE21589, C438S612000

Reexamination Certificate

active

07871918

ABSTRACT:
A manufacturing method of a contact structure includes first providing a substrate on which a contact pad has already been formed. Afterwards, a polymer bump is formed on the contact pad. Next, a conductive layer is formed on the polymer bump. The conductive layer covers the polymer bump and extends to the outside of the polymer bump. The portion of the conductive layer extending to the outside of the polymer bump serves as a test pad.

REFERENCES:
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patent: 5877556 (1999-03-01), Jeng et al.
patent: 6137184 (2000-10-01), Ikegami
patent: 2005/0275115 (2005-12-01), Tanaka et al.
patent: 487998 (2002-05-01), None
“1st Office Action of China counterpart application”, issued on Aug. 28, 2009, p. 1-p. 4.
“Notice of Allowance of Taiwan Counterpart Application” issued on Jun. 24, 2010, p. 1-p. 4, in which the listed references were cited.

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