Thin film transistor having a buffering pad layer for a liquid c

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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Details

257 66, H01L 2904, H01L 2976

Patent

active

058013954

ABSTRACT:
Disclosed is a thin film transistor (TFT) having a buffering pad layer and a method for manufacturing the same. This TFT is comprised of an active polysilicon pattern formed on a substrate. An oxide film is formed on the active polysilicon pattern. An intrinsic amorphous silicon pattern is formed on the oxide film and a metal pattern on the intrinsic amorphous silicon pattern. The intrinsic amorphous silicon layer serves as a buffering pad. The ion-implantation processes and heat processes are required if other types of silicon were used as a buffering pad.

REFERENCES:
patent: 5276347 (1994-01-01), Wei et al.

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