Structure for wiring reliability evaluation test and semiconduct

Details Structure for wiring reliability evaluation test and semiconduct Structure for wiring reliability evaluation test and semiconduct

1996-04-26

1998-09-01

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

257528, 257758, 257773, 257776, 438 14, H01L 2358

Patent

active

058013946

ABSTRACT:
A test line (12) is formed between a pair of current sypplying terminals (11). A step pattern (14) composed of polysilicon or the like is formed below the test line (12) through an inter-layer insulation film. One of two sides of the step pattern (14) that extends along the longitudinal direction of the test line (12) is positioned therebelow so as to form a step extending in a direction of the test line. Thus, since electromigration tends to easily take place, the deterioration of the semiconductor device can be precisely evaluated.

REFERENCES:
patent: 4652812 (1987-03-01), Gimpelson et al.
patent: 4739258 (1988-04-01), Schwarz
patent: 4970574 (1990-11-01), Tsunenari
patent: 5049811 (1991-09-01), Dreyer et al.
patent: 5264377 (1993-11-01), Chesire et al.
patent: 5281850 (1994-01-01), Kanamori
patent: 5291142 (1994-03-01), Ohmi
patent: 5414351 (1995-05-01), Hsu et al.
patent: 5448179 (1995-09-01), Burns
patent: 5497076 (1996-03-01), Kuo et al.
patent: 5514974 (1996-05-01), Bouldin
IBM Technical Disclosure Bulletin (vol. 34, No. 12, May 1992) "On-Chip Electromigration Sensor Using Silicon Device," p. 197.
Liew, B.K., et al., "Reliability Simulator for Interconnect and Intermetallic Contact Elecromigration." Proc. 28.sup.th Int. Reliab. Phys. Symp. IEEE, pp. 111-118, 1990.
"Step Spacing Effect on Electromigration", Proc. 1990, IEEE/IRPS, pp. 20-24, 1990. no month.

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